Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography
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چکیده
منابع مشابه
Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography
High-resolution lithography often involves thin resist layers which pose a challenge for pattern characterization. Direct evidence that the pattern was well-defined and can be used for device fabrication is provided if a successful pattern transfer is demonstrated. In the case of thermal scanning probe lithography (t-SPL), highest resolutions are achieved for shallow patterns. In this work, we ...
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ژورنال
عنوان ژورنال: ACS Nano
سال: 2017
ISSN: 1936-0851,1936-086X
DOI: 10.1021/acsnano.7b06307